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Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC – photo 1
Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC – photo 2
Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC – photo 3
Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC – photo 4
Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC – photo 5
Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC – photo 6
SAMSUNG

Samsung MZ-V9S2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

R6,839
incl. VAT: R7,865
  • Stock: Backordered goods - 10-15 days
  • Brand: SAMSUNG
  • Model: MZ-V9S2T0BW
  • Weight: 0.07 kg
  • Dimensions: 15 × 10 × 3 cm
  • EAN: 8806095575650
  • Product code: 1398244
  • Manufacturer warranty (months): 60L
Ships from a partner warehouse Delivery in 10–15 working days

Available Options

R6,839 incl. VAT: R7,865
  • 1-year warranty for everythingPossible to extend up to 5 years
  • 7-day returnsChanged your mind? No questions asked
  • Flexible paymentCard Payments, Instant EFT, Apple Pay & Google Pay, Capitec Pay
  • Delivery across and abroad South AfricaFedex, Wayout, Bolt or pickup in Johannesburg
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Key features

  • Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, offering flexibility for current and future computing.
  • Sequential read speeds of up to 7,250MB/s to meet the demands of business and creative work.
  • Available in different capacities up to 4TB.
  • Power efficient design puts less burden on your PC's battery life.
  • Smart thermal solution provides consistent and reliable performance.
  • Five year limited warranty.

Key features

  • Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, offering flexibility for current and future computing.
  • Sequential read speeds of up to 7,250MB/s to meet the demands of business and creative work.
  • Available in different capacities up to 4TB.
  • Power efficient design puts less burden on your PC's battery life.
  • Smart thermal solution provides consistent and reliable performance.
  • Five year limited warranty.
Tags: samsung flash memory , samsung flash memor

Description

Spectacular speed everyday

Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day

Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software

Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life

For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance

Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency

Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility

Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

Price History

Price History

6,839 ZAR
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Specifications

Features
SSD capacity 2 TB
SSD form factor M.2
Interface PCI Express 4.0
NVMe Yes
Memory type V-NAND TLC
Component for PC
Hardware encryption Yes
NVMe version 2
Security algorithms 256-bit AES
M.2 SSD size 2280 (22 x 80 mm)
Read speed 7250 MB/s
Write speed 6300 MB/s
Random read (4KB) 1000000 IOPS
Random write (4KB) 1350000 IOPS
DevSlp (device sleep) support Yes
S.M.A.R.T. support Yes
TRIM support Yes
Mean time between failures (MTBF) 1500000 h
Power
Operating voltage 3.3 V
Power consumption (read) 4.6 W
Power consumption (write) 4.2 W
Average power consumption (read) 4.6 W
Average power consumption (write) 4.2 W
Power consumption (idle) 0.06 W
Power consumption DevSlp (device sleep) 5 mW
Weight & dimensions
Width 80.2 mm
Depth 2.38 mm
Height 80.2 mm
Weight 9 g
Operational conditions
Operating temperature (T-T) 0 - 70 °C
Operating shock 1500 G