AFOX DDR4 8G 2133 UDIMM memory module 8 GB 1 x 8 GB 2133 MHz
Delivery Time
Johannesburg, Pretoria Area 5-12 working days.
Cape Town, Durban Area 5-12 working days.
Outlying Areas 6-14 working days.
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AFOX DDR4 8G 2133 UDIMM memory module 8 GB 1 x 8 GB 2133 MHz
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R408
Ex VAT: R355
Discount only available
when paying by EFT
when paying by EFT
- Stock: 5+ In Stock at Warehouse
- Product code: 824116
- Model: AFLD48VH1P
- Warranty: 24 months
- Dimensions: 1.30cm x 9.10cm x 16.70cm
- EAN: 4897033783521
Available Options
AFOX DDR4 8G 2133 UDIMM memory module 8 GB 1 x 8 GB 2133 MHz
Certification: CE Refresh row cycle time: 260 ns Component for: PC/Server Weight: 18 g Buffered memory type: Unregistered (unbuffered) Compatible chipsets: Intel H110 Internal memory: 8 GB Internal memory type: DDR4 CAS latency: 15 Package height: 168 mm Package width: 88 mm Memory form factor: 288-pin DIMM Chips organisation: x8 FBGA DRAM chip Storage temperature (T-T): -55 - 100 C Memory clock speed: 2133 MHz Memory bandwidth (max): 17 GB/s Sustainability certificates: RoHS Row cycle time: 46.5 ns Operating temperature (T-T): 0 - 85 C Programming power voltage (VPP): 2.5 V Memory layout (modules x size): 1 x 8 GB Memory channels: Dual-channel Package weight: 36 g Height: 31 mm Width: 133 mm ECC: No JEDEC standard: Yes Row active time: 33 ns Memory voltage: 1.2 V
Certification: CE Refresh row cycle time: 260 ns Component for: PC/Server Weight: 18 g Buffered memory type: Unregistered (unbuffered) Compatible chipsets: Intel H110 Internal memory: 8 GB Internal memory type: DDR4 CAS latency: 15 Package height: 168 mm Package width: 88 mm Memory form factor: 288-pin DIMM Chips organisation: x8 FBGA DRAM chip Storage temperature (T-T): -55 - 100 C Memory clock speed: 2133 MHz Memory bandwidth (max): 17 GB/s Sustainability certificates: RoHS Row cycle time: 46.5 ns Operating temperature (T-T): 0 - 85 C Programming power voltage (VPP): 2.5 V Memory layout (modules x size): 1 x 8 GB Memory channels: Dual-channel Package weight: 36 g Height: 31 mm Width: 133 mm ECC: No JEDEC standard: Yes Row active time: 33 ns Memory voltage: 1.2 V