AFOX DDR4 8G 2400 SO DIMM memory module 8 GB 1 x 8 GB 2400 MHz
Delivery Time
Johannesburg, Pretoria Area 5-12 working days.
Cape Town, Durban Area 5-12 working days.
Outlying Areas 6-14 working days.
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AFOX DDR4 8G 2400 SO DIMM memory module 8 GB 1 x 8 GB 2400 MHz
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R410
Ex VAT: R357
Discount only available
when paying by EFT
when paying by EFT
- Stock: 4 In Stock at Warehouse
- Product code: 837031
- Model: AFSD48EH1P
- Warranty: 24 months
- Dimensions: 17.20cm x 6.00cm x 1.80cm
- EAN: 4897033788632
Available Options
AFOX DDR4 8G 2400 SO DIMM memory module 8 GB 1 x 8 GB 2400 MHz
Certification: CE Component for: Laptop RoHS compliance: Y Compatible chipsets: Intel H55 Express Memory form factor: 260-pin SO-DIMM Memory clock speed: 2400 MHz Memory channels: Dual-channel Width: 69.6 mm Weight: 8 g Operating temperature (T-T): 0 - 85 C Memory layout (modules x size): 1 x 8 GB Storage temperature (T-T): -55 - 100 C ECC: No Package height: 88 mm Package weight: 26 g CAS latency: 17 Internal memory type: DDR4 Row cycle time: 46.5 ns Memory bandwidth (max): 19.2 GB/s Height: 30 mm Package width: 168 mm Buffered memory type: Unregistered (unbuffered) Product colour: Black Internal memory: 8 GB Memory voltage: 1.2 V Programming power voltage (VPP): 2.5 V Refresh row cycle time: 260 ns Chips organisation: x8 FBGA DRAM Row active time: 33 ns JEDEC standard: Yes
Certification: CE Component for: Laptop RoHS compliance: Y Compatible chipsets: Intel H55 Express Memory form factor: 260-pin SO-DIMM Memory clock speed: 2400 MHz Memory channels: Dual-channel Width: 69.6 mm Weight: 8 g Operating temperature (T-T): 0 - 85 C Memory layout (modules x size): 1 x 8 GB Storage temperature (T-T): -55 - 100 C ECC: No Package height: 88 mm Package weight: 26 g CAS latency: 17 Internal memory type: DDR4 Row cycle time: 46.5 ns Memory bandwidth (max): 19.2 GB/s Height: 30 mm Package width: 168 mm Buffered memory type: Unregistered (unbuffered) Product colour: Black Internal memory: 8 GB Memory voltage: 1.2 V Programming power voltage (VPP): 2.5 V Refresh row cycle time: 260 ns Chips organisation: x8 FBGA DRAM Row active time: 33 ns JEDEC standard: Yes