Kingston UDIMM ECC 8GB DDR4 1Rx8 Hynix D 2666MHz PC4-21300 KSM26ES8/8HD
Delivery Time
Johannesburg, Pretoria Area 5-12 working days.
Cape Town, Durban Area 5-12 working days.
Outlying Areas 6-14 working days.
Quality Guarantee
If your product is Defective or Not Working properly, return your item within 7 days for a full refund
Safe & Secure Payments
We offer multiple ways to pay. Credit Card, EFT, Payment on Collection or COD
Kingston UDIMM ECC 8GB DDR4 1Rx8 Hynix D 2666MHz PC4-21300 KSM26ES8/8HD
Free Shipping over R10,000
Get free shipping when you spend R10,000 or more after any promotion codes or discounts. No promo code required.
R866
Ex VAT: R753
Discount only available
when paying by EFT
when paying by EFT
- Stock: 5+ In Stock at Warehouse
- Product code: 677144
- Model: KSM26ES8/8HD
- Warranty: 24 months
- Dimensions: 4.50cm x 16.00cm x 1.00cm
- EAN: 740617312171
Available Options
Kingston UDIMM ECC 8GB DDR4 1Rx8 Hynix D 2666MHz PC4-21300 KSM26ES8/8HD
Height: 31.2 mm ECC: Yes Harmonized System (HS) code: 84733020 Internal memory type: DDR4 Memory clock speed: 2666 MHz Memory form factor: UDIMM ECC Operating temperature (T-T): 0 - 85 C Sustainability certificates: RoHS Component for: PC/Server Memory ranking: 1 Buffered memory type: Unregistered (unbuffered) Storage temperature (T-T): -55 - 100 C Memory layout (modules x size): 1 x 8 GB SPD profile: Yes Chips organisation: 1Rx8 Refresh row cycle time: 350 ns Memory voltage: 1.2 V CAS latency: 19 Row cycle time: 45.75 ns Width: 133.3 mm Internal memory: 8 GB Row active time: 32 ns JEDEC standard: Yes
Height: 31.2 mm ECC: Yes Harmonized System (HS) code: 84733020 Internal memory type: DDR4 Memory clock speed: 2666 MHz Memory form factor: UDIMM ECC Operating temperature (T-T): 0 - 85 C Sustainability certificates: RoHS Component for: PC/Server Memory ranking: 1 Buffered memory type: Unregistered (unbuffered) Storage temperature (T-T): -55 - 100 C Memory layout (modules x size): 1 x 8 GB SPD profile: Yes Chips organisation: 1Rx8 Refresh row cycle time: 350 ns Memory voltage: 1.2 V CAS latency: 19 Row cycle time: 45.75 ns Width: 133.3 mm Internal memory: 8 GB Row active time: 32 ns JEDEC standard: Yes