Samsung MZ-V8P2T0BW internal solid state drive M.2 2 TB PCI Express 4.0 V-NAND MLC NVMe

Samsung MZ-V8P2T0BW internal solid state drive M.2 2 TB PCI Express 4.0 V-NAND MLC NVMe

PCI Express interface data lanes: x4 Mean time between failures (MTBF): 1500000 h Random write (4KB): 1000000 IOPS NVMe: Yes Operating voltage: 3.3 V Operating temperature (T-T): 0 - 70 C Depth: 2.38 mm Random read (4KB): 1000000 IOPS Weight: 9 g SSD form factor: M.2 Component for: PC/Laptop Write speed: 5100 MB/s SSD capacity: 2 TB S.M.A.R.T. support: Yes Hardware encryption: Yes Security algorithms: 256-bit AES Width: 80.2 mm Interface: PCI Express 4.0 Power consumption (average): 6.1 W Power consumption (standby): 0.035 W Harmonized System (HS) code: 84717070 Read speed: 7000 MB/s Operating shock: 1500 G Maximum operating temperature: 70 C Height: 22.1 mm Memory type: V-NAND MLC Power consumption (max): 7.2 W Package type: Box NVMe version: 1.3c TRIM support: Yes